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REV 5 February 755344g advanced process technology achieves the datashest possible on-resistance per silicon area, resulting in outstanding performance.
It was designed for use in applications where power.
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HUF75344G3: N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ
Gate to Source Gate Charge. Test Circuits and Waveforms. Request for this document already exists and is waiting for approval.